本文主要研究内容
作者史家兴（2019）在《Fe-Ga薄膜及磁电耦合器件的研究》一文中研究指出：用磁致伸缩材料与压电材料制备的复合磁电材料可应用于谐振器、滤波器、回转器、高密度存贮器等。基于磁-力-电耦合效应的磁电器件同时还对弱磁场敏感,在磁场检测以及能量回收领域有着良好的应用前景。磁致伸缩材料是磁电器件的一个重要组分。与稀土磁致伸缩材料相比,Fe-Ga具有较低的偏置磁场与良好的磁弹性能,在磁电领域受到了一定的关注。本文针对Fe-Ga薄膜在磁电器件中的应用,用磁控溅射制备了Fe-Ga/PZT与Fe-Ga/AlN/Mo/Si两种磁电器件,研究了Fe-Ga薄膜的物性与器件磁电系数间的相关性,旨在优化Fe-Ga磁致伸缩薄膜的性能,提高器件的磁电系数并降低偏置磁场。此工作对磁电器件的开发与应用有一定的意义。本文首先实验证实了器件的磁电系数αME与薄膜的微分磁弹系数(db/dH)存在线性相关性,提出了基于薄膜微分磁弹系数来计算磁电系数的半经验公式。同时研究了不同Si衬底、不同缓冲层及不同溅射参数下的Fe-Ga薄膜,找到了最佳沉积参数。实验还发现Ti和Mo缓冲层在不影响薄膜磁弹性的同时可改善热处理时薄膜与基体的结合,并用EBSD观测到Fe-Ga薄膜晶粒的异常长大。其次本文结合AlN压电薄膜设计了Fe-Ga/AlN/Mo/Si(100)磁电器件,并通过磁场热处理使得器件具有良好的空间角度分辨率。该器件在共振频率下,长度方向的磁电系数为210 V/cm Oe。揭示了面内各向异性是使得该器件具有空间角度分辨率的必要条件。最后通过(Fe-Ga/Fe-Ni)多层薄膜替代器件中单一的Fe-Ga磁性膜。利用磁性层之间的交换耦合改变薄膜磁畴的宽度,降低磁滞损耗,并且提高薄膜整体的压磁系数,有效地降低偏置磁场。(8 nm Fe-Ga/8 nm Fe-Ni)30/AlN/Mo/Si磁电器件在4 Oe的偏置磁场下,磁电系数可到607 V/cm Oe。处于磁交换耦合范围内的(8 nm Fe-Ga/8 nm Fe-Ni)30薄膜具有高微分磁弹系数(0.32 MPa/Oe)与高压磁系数(8.1 ppm/Oe),可以用于制备磁电器件及驱动器等微电子机械系统。
Abstract
yong ci zhi shen su cai liao yu ya dian cai liao zhi bei de fu ge ci dian cai liao ke ying yong yu xie zhen qi 、lv bo qi 、hui zhuai qi 、gao mi du cun zhu qi deng 。ji yu ci -li -dian ou ge xiao ying de ci dian qi jian tong shi hai dui ruo ci chang min gan ,zai ci chang jian ce yi ji neng liang hui shou ling yu you zhao liang hao de ying yong qian jing 。ci zhi shen su cai liao shi ci dian qi jian de yi ge chong yao zu fen 。yu xi tu ci zhi shen su cai liao xiang bi ,Fe-Gaju you jiao di de pian zhi ci chang yu liang hao de ci dan xing neng ,zai ci dian ling yu shou dao le yi ding de guan zhu 。ben wen zhen dui Fe-Gabao mo zai ci dian qi jian zhong de ying yong ,yong ci kong jian she zhi bei le Fe-Ga/PZTyu Fe-Ga/AlN/Mo/Siliang chong ci dian qi jian ,yan jiu le Fe-Gabao mo de wu xing yu qi jian ci dian ji shu jian de xiang guan xing ,zhi zai you hua Fe-Gaci zhi shen su bao mo de xing neng ,di gao qi jian de ci dian ji shu bing jiang di pian zhi ci chang 。ci gong zuo dui ci dian qi jian de kai fa yu ying yong you yi ding de yi yi 。ben wen shou xian shi yan zheng shi le qi jian de ci dian ji shu αMEyu bao mo de wei fen ci dan ji shu (db/dH)cun zai xian xing xiang guan xing ,di chu le ji yu bao mo wei fen ci dan ji shu lai ji suan ci dian ji shu de ban jing yan gong shi 。tong shi yan jiu le bu tong Sichen de 、bu tong huan chong ceng ji bu tong jian she can shu xia de Fe-Gabao mo ,zhao dao le zui jia chen ji can shu 。shi yan hai fa xian Tihe Mohuan chong ceng zai bu ying xiang bao mo ci dan xing de tong shi ke gai shan re chu li shi bao mo yu ji ti de jie ge ,bing yong EBSDguan ce dao Fe-Gabao mo jing li de yi chang chang da 。ji ci ben wen jie ge AlNya dian bao mo she ji le Fe-Ga/AlN/Mo/Si(100)ci dian qi jian ,bing tong guo ci chang re chu li shi de qi jian ju you liang hao de kong jian jiao du fen bian lv 。gai qi jian zai gong zhen pin lv xia ,chang du fang xiang de ci dian ji shu wei 210 V/cm Oe。jie shi le mian nei ge xiang yi xing shi shi de gai qi jian ju you kong jian jiao du fen bian lv de bi yao tiao jian 。zui hou tong guo (Fe-Ga/Fe-Ni)duo ceng bao mo ti dai qi jian zhong chan yi de Fe-Gaci xing mo 。li yong ci xing ceng zhi jian de jiao huan ou ge gai bian bao mo ci chou de kuan du ,jiang di ci zhi sun hao ,bing ju di gao bao mo zheng ti de ya ci ji shu ,you xiao de jiang di pian zhi ci chang 。(8 nm Fe-Ga/8 nm Fe-Ni)30/AlN/Mo/Sici dian qi jian zai 4 Oede pian zhi ci chang xia ,ci dian ji shu ke dao 607 V/cm Oe。chu yu ci jiao huan ou ge fan wei nei de (8 nm Fe-Ga/8 nm Fe-Ni)30bao mo ju you gao wei fen ci dan ji shu (0.32 MPa/Oe)yu gao ya ci ji shu (8.1 ppm/Oe),ke yi yong yu zhi bei ci dian qi jian ji qu dong qi deng wei dian zi ji xie ji tong 。
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论文作者分别是来自北京科技大学的史家兴，发表于刊物北京科技大学2019-06-27论文，是一篇关于磁致伸缩论文,合金论文,薄膜论文,耦合效应论文,北京科技大学2019-06-27论文的文章。本文可供学术参考使用，各位学者可以免费参考阅读下载，文章观点不代表本站观点，资料来自北京科技大学2019-06-27论文网站，若本站收录的文献无意侵犯了您的著作版权，请联系我们删除。
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