本文主要研究内容
作者田晓宇（2019）在《高灵敏度氢探测薄膜传感器的制备及性能研究》一文中研究指出：氢气作为清洁能源引起了人们的极大关注,也是未来最有潜力的能源之一。本文针对氢气浓度跨度大、测量下限低、功耗低、工作模式简单的应用场景的氢气浓度测量的需求背景,采用薄膜技术和MEMS技术,开展惠斯通电桥式氢薄膜传感器的设计、制备及性能研究。通过系统研究,获得以下主要结果:首先,开展了PdNi合金薄膜和Si3N4薄膜的制备及微观结构研究。采用直流磁控溅射法制备PdNi合金薄膜,其中靶材采用PdNi镶嵌靶,所制备的PdNi合金薄膜表面平整且致密度高,合金薄膜中Ni原子占比为13.49%。随着PdNi合金薄膜厚度从20 nm增大至100 nm,其方阻从20.90Ω/□逐渐减小到3.32Ω/□,其电阻率从4.18×10-5Ω·cm减小到3.32×10-5Ω·cm。经300℃氮气退火后,PdNi薄膜的衍射峰逐渐增强,薄膜结晶度更高,晶粒尺寸增大,同时薄膜表面平整度仍较高。采用射频反应磁控溅射法制备Si3N4薄膜,所制备的Si3N4薄膜的致密度较高。其次,以PdNi薄膜作为氢敏感层,Si3N4薄膜作为氢扩散阻挡层,设计和制备了惠斯通电桥式氢薄膜传感器。该传感器从下到上依次为氧化硅基片、Si3N4薄膜、四个单独的PdNi薄膜电阻,PdNi薄膜电阻为8.4 kΩ,利用外置电路的连接实现惠斯通电桥结构,其中两个PdNi薄膜电阻作为氢敏电阻,另外两个有氢扩散阻挡层的PdNi薄膜电阻作为参考电阻。采用光刻-镀膜-剥离工艺制备氢薄膜传感器样品,其中线条宽度为100?m,PdNi薄膜厚度为100 nm,氢扩散阻挡层Si3N4薄膜厚度为160 nm,电极焊盘Au薄膜厚度为220 nm。第三,对氢气传感器自动标定系统进行了改造,以恒压源提供恒定输入电压、控温系统提供恒温的测试环境、混气系统自动混合出不同浓度的氮氢混合气,通过LaBVIEW程序测量并自动记录传感器的输出电压信号。第四,采用氢传感器标定系统对制备的传感器样品进行了性能标定。结果表明,随着测试温度的升高,未退火的氢薄膜传感器的输出响应降低。在30°C70°C测试温度下,传感器的输出电压逐渐从41.35 mV减小到25.153 mV,响应时间从2.88 min增大到7.69 min;传感器样品对高浓度氢气具有良好的响应,随着氢气浓度的增加,传感器的输出电压也逐渐增大,在50℃、0.4%1.2%的氢气浓度范围内,传感器的输出信号从37 mV增大到50 mV,响应时间从6.01 min逐渐缩小至4.18 min;在50℃、200 ppm800 ppm的氢气浓度范围内,传感器的输出信号从10mV逐渐增大到18 mV;传感器具有良好的稳定性和重复性,在对0.4%氢气浓度的循环测试中,惠斯通电桥式氢薄膜传感器的输出电压峰值在31.96 mV34.01 mV之间波动;而退火后传感器的输出电压峰值在13.252 mV13.365 mV左右波动,且零点漂移较小。最后,研究了退火热处理对传感器性能的影响。退火后传感器的输出电压有所减小,但样品的重复性和稳定性得到了较大的改善,响应时间和恢复时间出现了较大幅度的降低。在50°C、1.2%的氢气浓度下,传感器的输出电压从48.60 mV减小到19.80 mV,恢复时间从15.56 min缩短到9.62 min;在50°C、200 ppm的氢气浓度下,传感器的输出电压从10 mV减小到3.2 mV,响应时间从25.94 min缩短到11.58 min,恢复时间从51.5 min缩短到26.12 min。此外,退火的传感器在10ppm、30 ppm和50 ppm低浓度氢气下分别有600μV、1200μV和1600μV的输出电压信号。优化工艺制备的传感器性能指标是:检测范围为10 ppm至1.2%;输出电压范围为600μV至19.80 mV;对于1.2%的氢气,响应时间和恢复时间分别是3.69 min和9.62 min;对于10 ppm的氢气,响应时间和恢复时间分别15.81 min和53.39 min。
Abstract
qing qi zuo wei qing jie neng yuan yin qi le ren men de ji da guan zhu ,ye shi wei lai zui you qian li de neng yuan zhi yi 。ben wen zhen dui qing qi nong du kua du da 、ce liang xia xian di 、gong hao di 、gong zuo mo shi jian chan de ying yong chang jing de qing qi nong du ce liang de xu qiu bei jing ,cai yong bao mo ji shu he MEMSji shu ,kai zhan hui si tong dian qiao shi qing bao mo chuan gan qi de she ji 、zhi bei ji xing neng yan jiu 。tong guo ji tong yan jiu ,huo de yi xia zhu yao jie guo :shou xian ,kai zhan le PdNige jin bao mo he Si3N4bao mo de zhi bei ji wei guan jie gou yan jiu 。cai yong zhi liu ci kong jian she fa zhi bei PdNige jin bao mo ,ji zhong ba cai cai yong PdNirang qian ba ,suo zhi bei de PdNige jin bao mo biao mian ping zheng ju zhi mi du gao ,ge jin bao mo zhong Niyuan zi zhan bi wei 13.49%。sui zhao PdNige jin bao mo hou du cong 20 nmzeng da zhi 100 nm,ji fang zu cong 20.90Ω/□zhu jian jian xiao dao 3.32Ω/□,ji dian zu lv cong 4.18×10-5Ω·cmjian xiao dao 3.32×10-5Ω·cm。jing 300℃dan qi tui huo hou ,PdNibao mo de yan she feng zhu jian zeng jiang ,bao mo jie jing du geng gao ,jing li che cun zeng da ,tong shi bao mo biao mian ping zheng du reng jiao gao 。cai yong she pin fan ying ci kong jian she fa zhi bei Si3N4bao mo ,suo zhi bei de Si3N4bao mo de zhi mi du jiao gao 。ji ci ,yi PdNibao mo zuo wei qing min gan ceng ,Si3N4bao mo zuo wei qing kuo san zu dang ceng ,she ji he zhi bei le hui si tong dian qiao shi qing bao mo chuan gan qi 。gai chuan gan qi cong xia dao shang yi ci wei yang hua gui ji pian 、Si3N4bao mo 、si ge chan du de PdNibao mo dian zu ,PdNibao mo dian zu wei 8.4 kΩ,li yong wai zhi dian lu de lian jie shi xian hui si tong dian qiao jie gou ,ji zhong liang ge PdNibao mo dian zu zuo wei qing min dian zu ,ling wai liang ge you qing kuo san zu dang ceng de PdNibao mo dian zu zuo wei can kao dian zu 。cai yong guang ke -du mo -bao li gong yi zhi bei qing bao mo chuan gan qi yang pin ,ji zhong xian tiao kuan du wei 100?m,PdNibao mo hou du wei 100 nm,qing kuo san zu dang ceng Si3N4bao mo hou du wei 160 nm,dian ji han pan Aubao mo hou du wei 220 nm。di san ,dui qing qi chuan gan qi zi dong biao ding ji tong jin hang le gai zao ,yi heng ya yuan di gong heng ding shu ru dian ya 、kong wen ji tong di gong heng wen de ce shi huan jing 、hun qi ji tong zi dong hun ge chu bu tong nong du de dan qing hun ge qi ,tong guo LaBVIEWcheng xu ce liang bing zi dong ji lu chuan gan qi de shu chu dian ya xin hao 。di si ,cai yong qing chuan gan qi biao ding ji tong dui zhi bei de chuan gan qi yang pin jin hang le xing neng biao ding 。jie guo biao ming ,sui zhao ce shi wen du de sheng gao ,wei tui huo de qing bao mo chuan gan qi de shu chu xiang ying jiang di 。zai 30°C70°Cce shi wen du xia ,chuan gan qi de shu chu dian ya zhu jian cong 41.35 mVjian xiao dao 25.153 mV,xiang ying shi jian cong 2.88 minzeng da dao 7.69 min;chuan gan qi yang pin dui gao nong du qing qi ju you liang hao de xiang ying ,sui zhao qing qi nong du de zeng jia ,chuan gan qi de shu chu dian ya ye zhu jian zeng da ,zai 50℃、0.4%1.2%de qing qi nong du fan wei nei ,chuan gan qi de shu chu xin hao cong 37 mVzeng da dao 50 mV,xiang ying shi jian cong 6.01 minzhu jian su xiao zhi 4.18 min;zai 50℃、200 ppm800 ppmde qing qi nong du fan wei nei ,chuan gan qi de shu chu xin hao cong 10mVzhu jian zeng da dao 18 mV;chuan gan qi ju you liang hao de wen ding xing he chong fu xing ,zai dui 0.4%qing qi nong du de xun huan ce shi zhong ,hui si tong dian qiao shi qing bao mo chuan gan qi de shu chu dian ya feng zhi zai 31.96 mV34.01 mVzhi jian bo dong ;er tui huo hou chuan gan qi de shu chu dian ya feng zhi zai 13.252 mV13.365 mVzuo you bo dong ,ju ling dian piao yi jiao xiao 。zui hou ,yan jiu le tui huo re chu li dui chuan gan qi xing neng de ying xiang 。tui huo hou chuan gan qi de shu chu dian ya you suo jian xiao ,dan yang pin de chong fu xing he wen ding xing de dao le jiao da de gai shan ,xiang ying shi jian he hui fu shi jian chu xian le jiao da fu du de jiang di 。zai 50°C、1.2%de qing qi nong du xia ,chuan gan qi de shu chu dian ya cong 48.60 mVjian xiao dao 19.80 mV,hui fu shi jian cong 15.56 minsu duan dao 9.62 min;zai 50°C、200 ppmde qing qi nong du xia ,chuan gan qi de shu chu dian ya cong 10 mVjian xiao dao 3.2 mV,xiang ying shi jian cong 25.94 minsu duan dao 11.58 min,hui fu shi jian cong 51.5 minsu duan dao 26.12 min。ci wai ,tui huo de chuan gan qi zai 10ppm、30 ppmhe 50 ppmdi nong du qing qi xia fen bie you 600μV、1200μVhe 1600μVde shu chu dian ya xin hao 。you hua gong yi zhi bei de chuan gan qi xing neng zhi biao shi :jian ce fan wei wei 10 ppmzhi 1.2%;shu chu dian ya fan wei wei 600μVzhi 19.80 mV;dui yu 1.2%de qing qi ,xiang ying shi jian he hui fu shi jian fen bie shi 3.69 minhe 9.62 min;dui yu 10 ppmde qing qi ,xiang ying shi jian he hui fu shi jian fen bie 15.81 minhe 53.39 min。
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论文作者分别是来自电子科技大学的田晓宇，发表于刊物电子科技大学2019-07-17论文，是一篇关于薄膜论文,氢气传感器论文,惠斯通电桥论文,退火论文,电子科技大学2019-07-17论文的文章。本文可供学术参考使用，各位学者可以免费参考阅读下载，文章观点不代表本站观点，资料来自电子科技大学2019-07-17论文网站，若本站收录的文献无意侵犯了您的著作版权，请联系我们删除。
标签：薄膜论文; 氢气传感器论文; 惠斯通电桥论文; 退火论文; 电子科技大学2019-07-17论文;