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作者刘三姐,何荧峰,卫会云,仇鹏,宋祎萌,安运来,阿布度拉赫曼,彭铭曾,郑新和（2019）在《PEALD-deposited crystalline GaN films on Si(100) substrates with sharp interfaces》一文中研究指出：Polycrystalline gallium nitride(GaN) thin films were deposited on Si(100) substrates via plasma-enhanced atomic layer deposition(PEALD) under optimal deposition parameters. In this work, we focus on the research of the GaN/Si(100)interfacial properties. The x-ray reflectivity measurements show the clearly-resolved fringes for all the as-grown GaN films, which reveals a perfectly smooth interface between the GaN film and Si(100), and this feature of sharp interface is further confirmed by high resolution transmission electron microscopy(HRTEM). However, an amorphous interfacial layer(~ 2 nm) can be observed from the HRTEM images, and is determined to be mixture of Ga_xO_y and GaN by xray photoelectron spectroscopy. To investigate the effect of this interlayer on the GaN growth, an AlN buffer layer was employed for GaN deposition. No interlayer is observed between GaN and AlN, and GaN shows better crystallization and lower oxygen impurity during the initial growth stage than the GaN with an interlayer.
Abstract
Polycrystalline gallium nitride(GaN) thin films were deposited on Si(100) substrates via plasma-enhanced atomic layer deposition(PEALD) under optimal deposition parameters. In this work, we focus on the research of the GaN/Si(100)interfacial properties. The x-ray reflectivity measurements show the clearly-resolved fringes for all the as-grown GaN films, which reveals a perfectly smooth interface between the GaN film and Si(100), and this feature of sharp interface is further confirmed by high resolution transmission electron microscopy(HRTEM). However, an amorphous interfacial layer(~ 2 nm) can be observed from the HRTEM images, and is determined to be mixture of Ga_xO_y and GaN by xray photoelectron spectroscopy. To investigate the effect of this interlayer on the GaN growth, an AlN buffer layer was employed for GaN deposition. No interlayer is observed between GaN and AlN, and GaN shows better crystallization and lower oxygen impurity during the initial growth stage than the GaN with an interlayer.
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论文作者分别是来自Chinese Physics B的刘三姐,何荧峰,卫会云,仇鹏,宋祎萌,安运来,阿布度拉赫曼,彭铭曾,郑新和，发表于刊物Chinese Physics B2019年02期论文，是一篇关于,Chinese Physics B2019年02期论文的文章。本文可供学术参考使用，各位学者可以免费参考阅读下载，文章观点不代表本站观点，资料来自Chinese Physics B2019年02期论文网站，若本站收录的文献无意侵犯了您的著作版权，请联系我们删除。