本文主要研究内容
作者张志恒,赵飞,杨雯,莫镜辉,葛文,李学铭,杨培志（2019）在《脉冲功率对含硅量子点SiC_x薄膜物相结构及光谱特性的影响》一文中研究指出：基于硅量子点(Si-QDs)的全硅叠层太阳电池被认为是最有潜质的高效太阳电池之一。目前所报道的硅量子点薄膜存在硅量子点数密度低、缺陷多等问题,限制了硅量子点太阳电池的光电转换效率。微波退火(microwave annealing,MWA)被认为是一种有益于制备纳米结构材料的方法。微波退火的非热效应可以降低形核能,改善薄膜的微结构和光电性能。因此,采用磁控共溅射技术并结合微波退火工艺,在不同的脉冲功率下制备了含硅量子点SiCx薄膜;采用掠入射X射线衍射(GIXRD)、拉曼(Raman)光谱、紫外-可见-近红外分光光度计和光致发光(PL)光谱表征薄膜的物相结构及光谱特性;研究不同脉冲功率对硅量子点数密度和性能的影响,进而改进磁控共溅射工艺,制备硅量子点数密度较高和性能良好的薄膜。样品的GIXRD谱和Raman谱均显示其中存在硅量子点,其强度先增大后减小;通过谢乐(Scherrer)公式估算出硅量子点尺寸呈现先增大后减小的规律,脉冲功率为80W时尺寸达到最大(8.0nm)。在Raman光谱中还观察到中心位于511cm-1处出现硅量子点Si-Si横向光学振动模式的拉曼峰,其强度也呈现先增大后减小的趋势;对拉曼光谱做最佳高斯(Gauss)分峰拟合,得出薄膜的晶化率均高于62.58%,脉冲功率为80W时制备的薄膜具有最高的晶化率(79.29%)。上述分析表明薄膜中均有硅量子点的形成,且数量先增加后减小,脉冲功率为80 W时硅量子点数量最多。通过测量样品的透射率T、反射率R等光学参数,利用Tauc公式估算出薄膜的光学带隙,发现带隙值随溅射功率的增加先减小后增大,在脉冲功率为80W时最小(1.72eV)。硅量子点尺寸与光学带隙成反比,说明薄膜中的硅量子点具有良好的量子尺寸效应。通过PL光谱分析样品的发光特性,对其做最佳高斯拟合,发现样品中均有6个发光峰。结合Raman光谱的分析结果,可以得出波长位于463～624nm的发光峰源于硅量子点的作用;而波长位于408和430nm的发光峰则源于薄膜内部的缺陷态,峰位没有偏移,但强度有变化。根据发光峰对应的波长可计算其能带分布,从而确定缺陷态类型:408nm的发光峰归因于≡Si°→Ev电子辐射跃迁,430nm的发光峰则归因于≡Si°→≡Si-Si≡的缺陷态发光。还研究了硅量子点的尺寸对发光峰移动的影响。结果表明,随硅量子点尺寸变小(大),发光峰蓝移(红移)。综上,溅射功率为80W时制备的含硅量子点SiCx薄膜性能最佳。研究结果为硅量子点太阳电池的后续研究奠定了基础。
Abstract
ji yu gui liang zi dian (Si-QDs)de quan gui die ceng tai yang dian chi bei ren wei shi zui you qian zhi de gao xiao tai yang dian chi zhi yi 。mu qian suo bao dao de gui liang zi dian bao mo cun zai gui liang zi dian shu mi du di 、que xian duo deng wen ti ,xian zhi le gui liang zi dian tai yang dian chi de guang dian zhuai huan xiao lv 。wei bo tui huo (microwave annealing,MWA)bei ren wei shi yi chong you yi yu zhi bei na mi jie gou cai liao de fang fa 。wei bo tui huo de fei re xiao ying ke yi jiang di xing he neng ,gai shan bao mo de wei jie gou he guang dian xing neng 。yin ci ,cai yong ci kong gong jian she ji shu bing jie ge wei bo tui huo gong yi ,zai bu tong de mai chong gong lv xia zhi bei le han gui liang zi dian SiCxbao mo ;cai yong lve ru she Xshe xian yan she (GIXRD)、la man (Raman)guang pu 、zi wai -ke jian -jin gong wai fen guang guang du ji he guang zhi fa guang (PL)guang pu biao zheng bao mo de wu xiang jie gou ji guang pu te xing ;yan jiu bu tong mai chong gong lv dui gui liang zi dian shu mi du he xing neng de ying xiang ,jin er gai jin ci kong gong jian she gong yi ,zhi bei gui liang zi dian shu mi du jiao gao he xing neng liang hao de bao mo 。yang pin de GIXRDpu he Ramanpu jun xian shi ji zhong cun zai gui liang zi dian ,ji jiang du xian zeng da hou jian xiao ;tong guo xie le (Scherrer)gong shi gu suan chu gui liang zi dian che cun cheng xian xian zeng da hou jian xiao de gui lv ,mai chong gong lv wei 80Wshi che cun da dao zui da (8.0nm)。zai Ramanguang pu zhong hai guan cha dao zhong xin wei yu 511cm-1chu chu xian gui liang zi dian Si-Siheng xiang guang xue zhen dong mo shi de la man feng ,ji jiang du ye cheng xian xian zeng da hou jian xiao de qu shi ;dui la man guang pu zuo zui jia gao si (Gauss)fen feng ni ge ,de chu bao mo de jing hua lv jun gao yu 62.58%,mai chong gong lv wei 80Wshi zhi bei de bao mo ju you zui gao de jing hua lv (79.29%)。shang shu fen xi biao ming bao mo zhong jun you gui liang zi dian de xing cheng ,ju shu liang xian zeng jia hou jian xiao ,mai chong gong lv wei 80 Wshi gui liang zi dian shu liang zui duo 。tong guo ce liang yang pin de tou she lv T、fan she lv Rdeng guang xue can shu ,li yong Taucgong shi gu suan chu bao mo de guang xue dai xi ,fa xian dai xi zhi sui jian she gong lv de zeng jia xian jian xiao hou zeng da ,zai mai chong gong lv wei 80Wshi zui xiao (1.72eV)。gui liang zi dian che cun yu guang xue dai xi cheng fan bi ,shui ming bao mo zhong de gui liang zi dian ju you liang hao de liang zi che cun xiao ying 。tong guo PLguang pu fen xi yang pin de fa guang te xing ,dui ji zuo zui jia gao si ni ge ,fa xian yang pin zhong jun you 6ge fa guang feng 。jie ge Ramanguang pu de fen xi jie guo ,ke yi de chu bo chang wei yu 463～624nmde fa guang feng yuan yu gui liang zi dian de zuo yong ;er bo chang wei yu 408he 430nmde fa guang feng ze yuan yu bao mo nei bu de que xian tai ,feng wei mei you pian yi ,dan jiang du you bian hua 。gen ju fa guang feng dui ying de bo chang ke ji suan ji neng dai fen bu ,cong er que ding que xian tai lei xing :408nmde fa guang feng gui yin yu ≡Si°→Evdian zi fu she yue qian ,430nmde fa guang feng ze gui yin yu ≡Si°→≡Si-Si≡de que xian tai fa guang 。hai yan jiu le gui liang zi dian de che cun dui fa guang feng yi dong de ying xiang 。jie guo biao ming ,sui gui liang zi dian che cun bian xiao (da ),fa guang feng lan yi (gong yi )。zeng shang ,jian she gong lv wei 80Wshi zhi bei de han gui liang zi dian SiCxbao mo xing neng zui jia 。yan jiu jie guo wei gui liang zi dian tai yang dian chi de hou xu yan jiu dian ding le ji chu 。
论文参考文献
论文详细介绍
论文作者分别是来自光谱学与光谱分析的张志恒,赵飞,杨雯,莫镜辉,葛文,李学铭,杨培志，发表于刊物光谱学与光谱分析2019年02期论文，是一篇关于脉冲功率论文,微波退火论文,硅量子点论文,富硅碳化硅基薄膜论文,光谱特性论文,光谱学与光谱分析2019年02期论文的文章。本文可供学术参考使用，各位学者可以免费参考阅读下载，文章观点不代表本站观点，资料来自光谱学与光谱分析2019年02期论文网站，若本站收录的文献无意侵犯了您的著作版权，请联系我们删除。
标签：脉冲功率论文; 微波退火论文; 硅量子点论文; 富硅碳化硅基薄膜论文; 光谱特性论文; 光谱学与光谱分析2019年02期论文;