:Recent progress in devices and circuits based on wafer-scale transition metal dichalcogenides论文

:Recent progress in devices and circuits based on wafer-scale transition metal dichalcogenides论文

本文主要研究内容

作者(2019)在《Recent progress in devices and circuits based on wafer-scale transition metal dichalcogenides》一文中研究指出:Two-dimensional layered materials(2 DLMs) have triggered a broad research thrust over the last decade worldwide. Different from the gapless graphene, transition metal dichalcogenides(TMDs) exhibit versatile bandstructure, with bandgap sizes ranging from semi-metallic to over 2 e V. Therefore, 2 D-TMDs can be utilized in various applications from logic to optoelectronic devices. In this review we first introduce the latest developments of the wafer-scale synthesis of continuous TMD films, then we present recent advances in large scale devices and circuits based on TMD films, including logic, memory, optoelectronic and analog devices. We also provide a perspective and a look at the future device applications based on wafer-scale2 D-TMDs.

Abstract

Two-dimensional layered materials(2 DLMs) have triggered a broad research thrust over the last decade worldwide. Different from the gapless graphene, transition metal dichalcogenides(TMDs) exhibit versatile bandstructure, with bandgap sizes ranging from semi-metallic to over 2 e V. Therefore, 2 D-TMDs can be utilized in various applications from logic to optoelectronic devices. In this review we first introduce the latest developments of the wafer-scale synthesis of continuous TMD films, then we present recent advances in large scale devices and circuits based on TMD films, including logic, memory, optoelectronic and analog devices. We also provide a perspective and a look at the future device applications based on wafer-scale2 D-TMDs.

论文参考文献

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