:Enhance Algan/Gan Hemts Electrical Performance by Using Patterned Sapphire Substrate论文

:Enhance Algan/Gan Hemts Electrical Performance by Using Patterned Sapphire Substrate论文

本文主要研究内容

作者(2019)在《Enhance Algan/Gan Hemts Electrical Performance by Using Patterned Sapphire Substrate》一文中研究指出:As the market for personal communications services, and fifth generation(5G) mobile systems coming closer to reality, high frequency and high power device, radio frequency(RF) and microwave power ampl

Abstract

As the market for personal communications services, and fifth generation(5G) mobile systems coming closer to reality, high frequency and high power device, radio frequency(RF) and microwave power ampl

论文参考文献

  • [1].OPTIMIZED GROWTH OF GAN/ALGAN HFETS ON SAPPHIRE AND SIC SUBSTRATES BY AMMONIA- MBE[A]. H.Tang,J.B.Webb,J.A.Bardwell,Y.Liu,J.Lapointe,T.MacElwee.Abstracts of the 8th IUMRS International Conference on Electronic Materials IUMRS-ICEM2002[C]. 2002
  • [2].High Quality GaN Display Films Growth on Pre-treated Sapphire Substrate[A]. Dongsheng Peng~(1,2,3) Yuchun Feng~3 Hanben Niu~3 Xiaofeng Liu~3 1 Xi’an Institute of Optics and Precision Mechanics,Chinese Academy of Sciences,Xi’an 710068,China,2 Graduate School of the Chinese Academy of Sciences,Beijing 100049,China,3 Institute of Optoelectronics,Shenzhen University,Shenzhen 518060,China.Proceedings of Asia Display 2007(Volume 1)[C]. 2007
  • [3].Enhancement of the Light Extraction Efficiency of Flip-chip Light-emitting Diodes fabricated on patterned Silicon Carbide and Sapphire Substrates[A]. Mingsheng Xu,Huayong Xu,Yan Shen,Shuang Qu,Chengxin Wang,Xiaobo Hu,Xiangang Xu.第十届中国国际半导体照明论坛技术分会论文集[C]. 2013
  • [4].Graphene grown on sapphire surface by using SiC buffer layer with SSMBE[A]. J. Tang,C. Y. Kang,L. M. Li,H. B. Pan,S. Q. Wei,P. S. Xu* National Synchrotron Radiation Laboratory,University of Science and Technology of China,Hefei,230029,China.Abstracts of the 18th International of Vacuum Congress[C]. 2010
  • [5].Ab initio Hartree-Fock simulation of r-plane sapphire[A]. Thomas Stirner.Abstracts of the 18th International of Vacuum Congress[C]. 2010
  • [6].High temperature enhanced Al diffusion from sapphire substrate into ZnO grown by Metalorganic Chemical Vapor Deposition[A]. Shuzhen Li,Shulin Gu,Shunming Zhu,Kun Tang,Jiandong Ye,Rong Zhang,and Youdou Zheng Nanjing National Laboratory of Microstructures and School of Electronics Science and Engineering,Nanjing University,Nanjing 210093,China.Abstract Book of the 6th International Workshop on ZnO and Related Materials[C]. 2010
  • [7].Electronic characteristics of nitrogen-doped ZnO pn homojunction grown on sapphire substrates[A]. S. J. Jiao,Y. M. Lu,Z. Z. Zhang,D. Z. Shen,B. Yao,J. Y. Zhang,B. H. Li,X.W. Fan Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun,130033,People’s Republic of China.Abstract Book of the 6th International Workshop on ZnO and Related Materials[C]. 2010
  • [8].New technique of laser characterization of sapphire and fianite crystals[A]. A.N.Buzynin.第一届激光与物质相互作用国际会议论文集[C]. 2010
  • [9].286-TW Ti:sapphire laser at CAEP[A]. Hansheng Peng*,Xiaojun Huang,Qihua Zhu,Xiaodong Wang,Kainan Zhou,Xiaofeng Wei,Lanqin Liu,Xiaoming Zeng,Xiao Wang,Yi Guo,Donghui Lin,Xiaodong Yuan,Bing Xu,Longbo Xu,Xiaoliang Chu,Xiaomin Zhang,and Liejia Qian1 China Academy of Engineering Physics,P.O.Box 919-1,Mianyang,China,621900 1Fudan University,Shanghai,China,200433.Proceedings of Photonics Asia 2004;Optics and Lasers——5627volume[C]. 2004
  • [10].Design and characterization of a 300-TW Ti:sapphire laser[A]. Hansheng Peng*,Xiaojun Huang,Qihua Zhu,Xiaodong Wang,Kainan Zhou,Xiaofeng Wei,Lanqin Liu,Xiaoming Zeng,Xiao Wang,Yi Guo,Donghui Lin,Xiaodong Yuan,Bing Xu,Longbo Xu,Xiaoliang Chu,and Xiaomin Zhang China Academy of Engineering Physics,P.O.Box 919-1,Mianyang,China,621900.Proceedings of 20th Congress of the International Commission for Optics[C]. 2005
  • 论文详细介绍

    论文作者分别是来自2019第二届电子,通讯与控制工程国际会议的,发表于刊物2019第二届电子,通讯与控制工程国际会议2019-04-13论文,是一篇关于,2019第二届电子,通讯与控制工程国际会议2019-04-13论文的文章。本文可供学术参考使用,各位学者可以免费参考阅读下载,文章观点不代表本站观点,资料来自2019第二届电子,通讯与控制工程国际会议2019-04-13论文网站,若本站收录的文献无意侵犯了您的著作版权,请联系我们删除。

    标签:;  ;  

    :Enhance Algan/Gan Hemts Electrical Performance by Using Patterned Sapphire Substrate论文
    下载Doc文档

    猜你喜欢