本文主要研究内容
作者王霞,吴真平,崔尉,支钰崧,李志鹏,李培刚,郭道友,唐为华（2019）在《Synthesis of free-standing Ga2O3 films for flexible devices by water etching of Sr3Al2O6 sacrificial layers》一文中研究指出：Flexible electronic devices have attracted much attention due to their practical and commercial value. Integration of thin films with soft substrate is an effective way to fabricate flexible electronic devices. Ga2O3 thin films deposited directly on soft substrates would be amorphous mostly. However, the thickness of the thin film obtained by mechanical exfoliation method is difficult to control and the edge of the film is fragile and easy to be damaged. In this work, we fabricated free-standing Ga2O3 thin films using the water-soluble perovskite Sr3Al2O6 as a sacrificial buffer layer. The obtained Ga2O3 thin films were polycrystalline. The thickness and dimension of the films were controllable. A flexible Ga2O3solar-blind UV photodetector was fabricated by transferring the free-standing Ga2O3 film on a flexible polyethylene terephthalate substrate. The results displayed that the photoelectric performances of the flexible Ga2O3 photodetector were not sensitive to bending of the device. The free-standing Ga2O3 thin films synthesized through the method described here can be transferred to any substrates or integrated with other thin films to fabricate electronic devices.
Abstract
Flexible electronic devices have attracted much attention due to their practical and commercial value. Integration of thin films with soft substrate is an effective way to fabricate flexible electronic devices. Ga2O3 thin films deposited directly on soft substrates would be amorphous mostly. However, the thickness of the thin film obtained by mechanical exfoliation method is difficult to control and the edge of the film is fragile and easy to be damaged. In this work, we fabricated free-standing Ga2O3 thin films using the water-soluble perovskite Sr3Al2O6 as a sacrificial buffer layer. The obtained Ga2O3 thin films were polycrystalline. The thickness and dimension of the films were controllable. A flexible Ga2O3solar-blind UV photodetector was fabricated by transferring the free-standing Ga2O3 film on a flexible polyethylene terephthalate substrate. The results displayed that the photoelectric performances of the flexible Ga2O3 photodetector were not sensitive to bending of the device. The free-standing Ga2O3 thin films synthesized through the method described here can be transferred to any substrates or integrated with other thin films to fabricate electronic devices.
论文参考文献
论文详细介绍
论文作者分别是来自Chinese Physics B的王霞,吴真平,崔尉,支钰崧,李志鹏,李培刚,郭道友,唐为华，发表于刊物Chinese Physics B2019年01期论文，是一篇关于,Chinese Physics B2019年01期论文的文章。本文可供学术参考使用，各位学者可以免费参考阅读下载，文章观点不代表本站观点，资料来自Chinese Physics B2019年01期论文网站，若本站收录的文献无意侵犯了您的著作版权，请联系我们删除。