本文主要研究内容
作者马佳淋,王海龙,张兴民,闫帅,闫文盛,赵建华（2019）在《Epitaxial Growth and Magnetic Properties of NiMnAs Films on GaAs Substrates》一文中研究指出：Single-phase Ni0.92Mn1.08 As films with strained C1b symmetry are grown on GaAs（001） substrates. In addition,a preferred epitaxial configuration of（110）-orientated Ni0.92Mn1.08 As on（001）-orientated GaAs is revealed by synchrotron radiation measurement. The magnetic properties of the films are found to be significantly influenced by the growth temperature and the optimized growth temperature is determined to be 370℃. According to the results of x-ray absorption spectroscopy, these phenomena can be attributed to the variation of the local electronic structure of the Mn atoms. Our work provides useful information for the further investigations of NiMnAs, which is a theoretically predicted half-metal.
Abstract
Single-phase Ni0.92Mn1.08 As films with strained C1b symmetry are grown on GaAs（001） substrates. In addition,a preferred epitaxial configuration of（110）-orientated Ni0.92Mn1.08 As on（001）-orientated GaAs is revealed by synchrotron radiation measurement. The magnetic properties of the films are found to be significantly influenced by the growth temperature and the optimized growth temperature is determined to be 370℃. According to the results of x-ray absorption spectroscopy, these phenomena can be attributed to the variation of the local electronic structure of the Mn atoms. Our work provides useful information for the further investigations of NiMnAs, which is a theoretically predicted half-metal.
论文参考文献
[1].Fabrication of Titanium Dioxide Thin Films by DBD-CVD Under Atmosphere[J]. 张溪文,郭玉,韩高荣. Plasma Science and Technology.2007(06)[2].Impact of cooling condition on the crystal structure and surface quality of preferred c-axis-oriented AlN films for SAW devices[J]. 张庚宇,杨保和,赵健,李翠平,李明吉. Optoelectronics Letters.2011(04)[3].Influence of Nitrogen Vacancy Concentration on Mechanical and Electrical Properties of Rocksalt Zirconium Nitride Films[J]. Ke-Chang Han,Guo-Qiang Lin,Chuang Dong,Kai-Ping Tai,Xin Jiang. Acta Metallurgica Sinica(English Letters).2017(11)[4].Heteroepitaxy of semiconductor thin films[J]. Yi Gu. Journal of Semiconductors.2019(06)[5].Structure and microtribological characteristics of laser-arc deposited TiB2 thin film[J]. CAO Xiankun, SHAO Tianmin, WEN Shizhu, QING Tao & QI FengState Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China;The College of Mechanical & Electronic Engineering, WHUT, Wuhan 430070, China. Science in China(Series G:Physics,Mechanics & Astronomy).2004(S1)[6].Crystallographic tilt in GaN lavers grown by epitaxial lateral overgrowth[J]. 冯淦,郑新和,朱建军,沈晓明,张宝顺,赵德刚,孙元平,张泽洪,王玉田,杨辉,梁骏吾. Science in China,Ser.A.2002(11)[7].Study on nitridation processes of β-Ga2O3 single crystal[J]. 李星,夏长泰,何肖丽,裴广庆,张俊刚,徐军. Chinese Optics Letters.2008(04)[8].Structural,electronic,and magnetic properties of CrN under high pressure[J]. 蔺何,曾雉. Chinese Physics B.2011(07)[9].Investigation on the Orientation Transition of Oriented Magnetostrictive TbDyFe Crystals[J]. LIU Wei,JIANG Cheng-bao* School of Materials Science and Engineering,Beijing University of Aeronautics and Astronautics,Beijing 100083,China. Chinese Journal of Aeronautics.2006(S1)[10].Oxygen vacancies effects on phase diagram of epitaxial La1-xSrxMnO3 thin films[J]. Qian Wan,KuiJuan Jin,QingQing Li,YaQing Feng,Can Wang,Chen Ge,Meng He,HuiBin Lu,HaiZhong Guo,XiaoLong Li,YuPing Yang,GuoZhen Yang. Science China(Physics,Mechanics & Astronomy).2017(05)
论文详细介绍
论文作者分别是来自Chinese Physics Letters的马佳淋,王海龙,张兴民,闫帅,闫文盛,赵建华，发表于刊物Chinese Physics Letters2019年01期论文，是一篇关于,Chinese Physics Letters2019年01期论文的文章。本文可供学术参考使用，各位学者可以免费参考阅读下载，文章观点不代表本站观点，资料来自Chinese Physics Letters2019年01期论文网站，若本站收录的文献无意侵犯了您的著作版权，请联系我们删除。
标签：Chinese Physics Letters2019年01期论文;
马佳淋：Epitaxial Growth and Magnetic Properties of NiMnAs Films on GaAs Substrates论文
下载Doc文档