本文主要研究内容
作者(2019)在《Mn-doped topological insulators: a review》一文中研究指出:Topological insulators(TIs)host robust edge or surface states protected by time-reversal symmetry(TRS),which makes them prime candidates for applications in spintronic devices.A promising avenue of research for the development of functional TI devices has involved doping of three-dimensional(3D)TI thin film and bulk materials with magnetic elements.This approach aims to break the TRS and open a surface band gap near the Dirac point.Utilizing this gapped surface state allows for a wide range of novel physical effects to be observed,paving a way for applications in spintronics and quantum computation.This review focuses on the research of 3D TIs doped with manganese(Mn).We summarize major progress in the study of Mn doped chalcogenide TIs,including Bi2Se3,Bi2Te3,and Bi2(Te,Se)3.The transport properties,in particular the anomalous Hall effect,of the Mn-doped Bi2Se3 are discussed in detail.Finally,we conclude with future prospects and challenges in further studies of Mn doped TIs.
Abstract
Topological insulators(TIs)host robust edge or surface states protected by time-reversal symmetry(TRS),which makes them prime candidates for applications in spintronic devices.A promising avenue of research for the development of functional TI devices has involved doping of three-dimensional(3D)TI thin film and bulk materials with magnetic elements.This approach aims to break the TRS and open a surface band gap near the Dirac point.Utilizing this gapped surface state allows for a wide range of novel physical effects to be observed,paving a way for applications in spintronics and quantum computation.This review focuses on the research of 3D TIs doped with manganese(Mn).We summarize major progress in the study of Mn doped chalcogenide TIs,including Bi2Se3,Bi2Te3,and Bi2(Te,Se)3.The transport properties,in particular the anomalous Hall effect,of the Mn-doped Bi2Se3 are discussed in detail.Finally,we conclude with future prospects and challenges in further studies of Mn doped TIs.
论文参考文献
论文详细介绍
论文作者分别是来自Journal of Semiconductors的,发表于刊物Journal of Semiconductors2019年08期论文,是一篇关于,Journal of Semiconductors2019年08期论文的文章。本文可供学术参考使用,各位学者可以免费参考阅读下载,文章观点不代表本站观点,资料来自Journal of Semiconductors2019年08期论文网站,若本站收录的文献无意侵犯了您的著作版权,请联系我们删除。