闫帅帅:Resistance Switching Behaviour and Properties of Ag/La0.5Mg0.5MnO3/p+-Si with Different Thicknesses of Resistance Films Fabricated through Sol–Gel Method论文

闫帅帅:Resistance Switching Behaviour and Properties of Ag/La0.5Mg0.5MnO3/p+-Si with Different Thicknesses of Resistance Films Fabricated through Sol–Gel Method论文

本文主要研究内容

作者闫帅帅,王华(2019)在《Resistance Switching Behaviour and Properties of Ag/La0.5Mg0.5MnO3/p+-Si with Different Thicknesses of Resistance Films Fabricated through Sol–Gel Method》一文中研究指出:Ag/La0.5Mg0.5MnO3/p+-Si resistance switching device for nonvolatile memory application was fabricated by sol-gel method. The thickness effects of La0.5Mg0.5MnO3(LMMO) films on current-voltage(I-V) characteristics, resistance switching behaviour and endurance characteristics of Ag/LMMO/p+-Si device were investigated. The same crystallisation and phase structure were confirmed in the LMMO films with increased film thickness. The Ag/LMMO/p+-Si device exhibits the typical bipolar resistive switching behaviour. As the LMMO thickness and the stable repetition switching cycle numbers increase, VSet, and VReset of the device will increase, but the RHRS/RLRS will decrease. The Ag/LMMO/p+-Si device with 165 nm thick LMMO films exhibit the best performance, in which the RHRS/RLRS exceeds 104 for 1 000 switching cycles, and its degradation is invisible for more than 106s.

Abstract

Ag/La0.5Mg0.5MnO3/p+-Si resistance switching device for nonvolatile memory application was fabricated by sol-gel method. The thickness effects of La0.5Mg0.5MnO3(LMMO) films on current-voltage(I-V) characteristics, resistance switching behaviour and endurance characteristics of Ag/LMMO/p+-Si device were investigated. The same crystallisation and phase structure were confirmed in the LMMO films with increased film thickness. The Ag/LMMO/p+-Si device exhibits the typical bipolar resistive switching behaviour. As the LMMO thickness and the stable repetition switching cycle numbers increase, VSet, and VReset of the device will increase, but the RHRS/RLRS will decrease. The Ag/LMMO/p+-Si device with 165 nm thick LMMO films exhibit the best performance, in which the RHRS/RLRS exceeds 104 for 1 000 switching cycles, and its degradation is invisible for more than 106s.

论文参考文献

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  • 论文详细介绍

    论文作者分别是来自Journal of Wuhan University of Technology(Materials Science)的闫帅帅,王华,发表于刊物Journal of Wuhan University of Technology(Materials Science)2019年03期论文,是一篇关于,Journal of Wuhan University of Technology(Materials Science)2019年03期论文的文章。本文可供学术参考使用,各位学者可以免费参考阅读下载,文章观点不代表本站观点,资料来自Journal of Wuhan University of Technology(Materials Science)2019年03期论文网站,若本站收录的文献无意侵犯了您的著作版权,请联系我们删除。

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