本文主要研究内容
作者张文伦（2019）在《Improvement of Performance of HfS2 Transistors Using a Self-Assembled Monolayer as Gate Dielectric》一文中研究指出：This work details a study based on HfS2transistors utilizing an n-octadecylphosphonic acid-based self-assembled monolayer（SAM）as the gate dielectric.The fabrication of the SAM-based two-dimensional（2D）material transistor is simple and can be used to improve the quality of the interface of air-sensitive 2D materials.In comparison to HfS2 transistors utilizing a conventional Al2O3 gate insulator by atomic layer deposition,HfS2 transistors utilizing an SAM as the gate dielectric can reduce the operation region from 4 V to 2 V,enhance the field-effect mobility from 0.03 cm2/Vs to 0.75 cm2/Vs,improve the sub-threshold swing from 404 m V/dec to 156 m V/dec,and optimize the hysteresis to 0.03 V,thus demonstrating improved quality of the semiconductor/insulator interface.
Abstract
This work details a study based on HfS2transistors utilizing an n-octadecylphosphonic acid-based self-assembled monolayer（SAM）as the gate dielectric.The fabrication of the SAM-based two-dimensional（2D）material transistor is simple and can be used to improve the quality of the interface of air-sensitive 2D materials.In comparison to HfS2 transistors utilizing a conventional Al2O3 gate insulator by atomic layer deposition,HfS2 transistors utilizing an SAM as the gate dielectric can reduce the operation region from 4 V to 2 V,enhance the field-effect mobility from 0.03 cm2/Vs to 0.75 cm2/Vs,improve the sub-threshold swing from 404 m V/dec to 156 m V/dec,and optimize the hysteresis to 0.03 V,thus demonstrating improved quality of the semiconductor/insulator interface.
论文参考文献
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论文详细介绍
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张文伦：Improvement of Performance of HfS2 Transistors Using a Self-Assembled Monolayer as Gate Dielectric论文
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